DC FieldValueLanguage
dc.contributor.authorFahlbusch, Sebastian-
dc.contributor.authorSahli, Nizar-
dc.contributor.authorKlötzer, Sebastian-
dc.contributor.authorSchäning, Björn-
dc.contributor.authorHoffmann, Klaus Friedrich-
dc.date.accessioned2020-08-20T05:18:19Z-
dc.date.available2020-08-20T05:18:19Z-
dc.date.issued2016-
dc.identifier.citationEnthalten in: PCIM Europe 2016: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource . - 2016, insges. 8 S.de_DE
dc.identifier.isbn978-1-5108-2530-7-
dc.descriptionPCIM Europe 2016: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management : 10-12 May 2016 Nürnbergde_DE
dc.description.sponsorshipLeistungselektronikde_DE
dc.language.isoengde_DE
dc.publisherIEEEde_DE
dc.titleComparison of Unipolar Silicon Carbide Power Transistors Used in High Switching Frequency Inverter Topologiesde_DE
dc.typeConference Objectde_DE
dc.relation.conferencePCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementde_DE
dcterms.bibliographicCitation.originalpublisherplacePiscataway, NJde_DE
dc.identifier.urlhttp://ieeexplore.ieee.org/servlet/opac?punumber=7499335-
local.submission.typeonly-metadatade_DE
hsu.opac.importopac-2016-
hsu.identifier.ppn869441213-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltextNo Fulltext-
item.fulltext_sNo Fulltext-
item.openairetypeConference Object-
crisitem.author.deptLeistungselektronik-
crisitem.author.parentorgFakultät für Elektrotechnik-
Appears in Collections:3 - Reported Publications
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