DC FieldValueLanguage
dc.contributor.authorMüter, Ulf-
dc.contributor.authorSammler, Christian-
dc.contributor.authorFahlbusch, Sebastian-
dc.contributor.authorKlötzer, Sebastian-
dc.contributor.authorHoffmann, Klaus Friedrich-
dc.date.accessioned2020-08-20T05:18:19Z-
dc.date.available2020-08-20T05:18:19Z-
dc.date.issued2016-
dc.identifier.citationEnthalten in: European Conference on Power Electronics and Applications (18.:2016). 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe). - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource. - 2016, insges. 9 S.-
dc.identifier.isbn978-1-5090-1410-1-
dc.description.sponsorshipLeistungselektronik-
dc.language.isoeng-
dc.publisherIEEE-
dc.titleComparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors-
dc.typeConference Object-
dc.relation.conference18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) 2016-
dcterms.bibliographicCitation.originalpublisherplacePiscataway, NJ-
local.submission.typeonly-metadata-
dc.type.conferenceObjectConference Paper-
hsu.opac.importopac-2016-
hsu.identifier.ppn869443364-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltext_sNo Fulltext-
item.openairetypeConference Object-
item.fulltextNo Fulltext-
crisitem.author.deptLeistungselektronik-
crisitem.author.parentorgFakultät für Elektrotechnik-
Appears in Collections:3 - Publication references (without fulltext)
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