DC FieldValueLanguage
dc.contributor.authorMüter, Ulf-
dc.contributor.authorSammler, Christian-
dc.contributor.authorFahlbusch, Sebastian-
dc.contributor.authorKlötzer, Sebastian-
dc.contributor.authorHoffmann, Klaus Friedrich-
dc.date.accessioned2020-08-20T05:18:19Z-
dc.date.available2020-08-20T05:18:19Z-
dc.date.issued2016-
dc.identifier.citationEnthalten in: European Conference on Power Electronics and Applications (18.:2016). 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe). - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource . - 2016, insges. 9 S.de_DE
dc.identifier.isbn978-1-5090-1410-1-
dc.description.sponsorshipLeistungselektronikde_DE
dc.language.isoende_DE
dc.publisherIEEEde_DE
dc.titleComparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistorsde_DE
dc.typeConference Objectde_DE
dc.relation.conference18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)de_DE
hsu.accessrights.dnbfreede_DE
dcterms.bibliographicCitation.originalpublisherplacePiscataway, NJde_DE
dc.relation.pages9 S.de_DE
dc.identifier.urlhttps://ub.hsu-hh.de/DB=1.8/XMLPRS=N/PPN?PPN=869443364-
local.submission.typeonly-metadatade_DE
dcterms.bibliographicCitation.isPartOf2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) : 5-9 Sept. 2016 Karlsruhede_DE
item.grantfulltextnone-
item.fulltext_sNo Fulltext-
item.languageiso639-1en-
item.fulltextNo Fulltext-
item.openairetypeConference Object-
crisitem.author.deptLeistungselektronik-
crisitem.author.deptDekanat Elektrotechnik-
crisitem.author.deptFakultät für Elektrotechnik-
crisitem.author.parentorgFakultät für Elektrotechnik-
crisitem.author.parentorgFakultät für Elektrotechnik-
crisitem.author.parentorgFakultäten-
Appears in Collections:2016
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