Title: 3D computation of oxygen transport in Czochralski crystal growth of silicon considering evaporation
Authors: Raufeisen, Alexander 
Jana, Soumen 
Breuer, Michael  
Botsch, Tilmann W. 
Durst, Franz 
Language: en_US
Subject (DDC): DDC - Dewey Decimal Classification::000 Informatik, Wissen, Systeme
DDC - Dewey Decimal Classification::500 Naturwissenschaften
DDC - Dewey Decimal Classification::600 Technik
Issue Date: 2007
Publisher: Elsevier
Document Type: Article
Source: In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, ISSN 0022-0248, ZDB-ID 3043-0 - Bd. 303.2007, 1, S. 146-149, insges. 4 S.
Journal / Series / Working Paper (HSU): Journal of Crystal Growth 
Volume: 303
Issue: 1
Page Start: 146
Page End: 149
Pages: 146-149
Publisher Place: Amsterdam
Document Version: draft
For Czochralski (Cz) growth of silicon single crystals, 3D unsteady simulations of the oxygen transport in the turbulent melt flow were conducted using a new formulation for the evaporation at the free surface found by Sakai et al. [Electrochem. Solid-State Lett. 5 (8) (2002) G72]. Compared with 2D results from literature, the computed oxygen concentration now fits the experimental data better, showing lower values in the critical region beneath the crystal than in previous simulations, which mostly arises from the more accurate prediction of the flow field. Further computations of Cz configurations show how the oxygen distribution can be influenced by rotation of the crucible and crystal. © 2007 Elsevier B.V. All rights reserved.
Organization Units (connected with the publication): Universität Erlangen-Nürnberg 
URL: https://api.elsevier.com/content/abstract/scopus_id/34147120723
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2006.11.349
Appears in Collections:Publications of the HSU Researchers (before HSU)

Show full item record

CORE Recommender


checked on Dec 4, 2021

Google ScholarTM




Items in openHSU are protected by copyright, with all rights reserved, unless otherwise indicated.