DC FieldValueLanguage
dc.contributor.authorGöbel, Holger-
dc.contributor.authorGong, Lin-
dc.date.accessioned2020-03-26T15:48:42Z-
dc.date.available2020-03-26T15:48:42Z-
dc.date.issued2018-
dc.identifier.citationEnthalten in: Microelectronic engineering. - [S.l.] : Elsevier, 1983. - Online-Ressource . - Bd. 203/204.2018, Seite 31-37de_DE
dc.description.sponsorshipElektronikde_DE
dc.language.isoende_DE
dc.publisherElsevierde_DE
dc.relation.ispartofMicroelectronic engineeringde_DE
dc.titleStructural parameters affecting the performance of non-volatile memory based on organic field-effect transistorsde_DE
dc.typeArticlede_DE
dc.identifier.doi10.1016/j.mee.2018.11.004-
hsu.accessrights.dnbblockedde_DE
dcterms.bibliographicCitation.volume203/204de_DE
dcterms.bibliographicCitation.pagestart31de_DE
dcterms.bibliographicCitation.pageend37de_DE
dcterms.bibliographicCitation.originalpublisherplace[S.l.]de_DE
dc.identifier.urlhttps://ub.hsu-hh.de/DB=1.8/XMLPRS=N/PPN?PPN=1663712808-
local.submission.typeonly-metadatade_DE
item.languageiso639-1en-
item.fulltext_sNo Fulltext-
item.fulltextNo Fulltext-
item.openairetypeArticle-
item.grantfulltextnone-
crisitem.author.deptElektronik-
crisitem.author.orcid0000-0003-2397-8688-
crisitem.author.parentorgFakultät für Elektrotechnik-
Appears in Collections:2018
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