DC FieldValueLanguage
dc.contributor.authorKruglov, Vitaly G.-
dc.contributor.authorShandarov, Vladimir M.-
dc.contributor.authorTan, Yang-
dc.contributor.authorChen, Feng-
dc.contributor.authorKip, Detlef-
dc.contributor.editorTománek, Pavel-
dc.contributor.editorSenderáková, Dagmar-
dc.contributor.editorHrabovský, Miroslav-
dc.date.accessioned2022-01-17T09:24:34Z-
dc.date.available2022-01-17T09:24:34Z-
dc.date.issued2008-
dc.identifier.isbn9780819473790-
dc.identifier.issn0277-786X-
dc.description.abstractFormation of dark spatial optical solitons in planar waveguides produced by implantation of light ions into Fe- or Cudoped X cut lithium niobate wafers is experimentally studied. The implantation both of protons and O3+-ions results in the excellent waveguide layers with their thickness about 3 microns and optical losses less than 1 dB/cm. The soliton states at light wavelengths of 532 nm and 633 nm are developed due to the self-defocusing photorefractive- photovoltaic nonlinearity of lithium niobate. Extraordinarily polarized light beams are used in experiments to form dark solitons and to probe the soliton-induced waveguide channels. Steady-state dark photovoltaic spatial solitons have been realized in both, H+- implanted and O 3+- implanted planar waveguides at optical powers from 10 to 100 microwatts. The storage time of soliton-induced channel waveguides makes up at least some hours without special illumination of a planar waveguide and they may be erased within some seconds in a case of their permanent readout with stronger light beams. The possibility to form more complicated channel waveguide structures in regimes of dark spatial solitons is also demonstrated. © 2008 SPIE.-
dc.description.sponsorshipTechnische Universität Clausthal-
dc.language.isoeng-
dc.publisherSPIE-
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering-
dc.titleDark spatial photovoltaic solitons and soliton-induced waveguide elements in ion-implanted planar lithium niobate waveguides-
dc.typeConference Object-
dc.relation.conferencePhotonics, Devices, and Systems IV 2008-
dc.identifier.doi10.1117/12.818044-
dc.identifier.scopus2-s2.0-66749099427-
dcterms.bibliographicCitation.volume7138-
dcterms.bibliographicCitation.originalpublisherplaceBellingham, WA-
local.submission.typeonly-metadata-
dc.type.conferenceObjectConference Paper-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltext_sNo Fulltext-
item.openairetypeConference Object-
item.fulltextNo Fulltext-
crisitem.author.deptExperimentalphysik und Materialwissenschaften-
crisitem.author.orcid0000-0001-7923-0113-
crisitem.author.parentorgFakultät für Elektrotechnik-
Appears in Collections:6 - Publication references (without fulltext) of your publications before HSU
Show simple item record

CORE Recommender

SCOPUSTM   
Citations

1
checked on Apr 5, 2024

Google ScholarTM

Check

Altmetric

Altmetric


Items in openHSU are protected by copyright, with all rights reserved, unless otherwise indicated.