DC FieldValueLanguage
dc.contributor.authorHasse, Kore Yunxin-
dc.contributor.authorKip, Detlef-
dc.contributor.authorKränkel, Christian-
dc.date.accessioned2021-12-15T08:28:00Z-
dc.date.available2021-12-15T08:28:00Z-
dc.date.issued2021-
dc.identifier.issn2159-3930-
dc.identifier.issn2159-3930-
dc.description.abstractWe show that the inscription velocity of fs-laser written structures in YAG crystals can be significantly improved by the use of MHz repetition rates for the writing process. Using a 10 MHz inscription laser, record high writing velocities up to 100 mm/s are achieved. Also, the selective etching process is accelerated using a diluted mixture of 22% H3PO4and 24% H2SO4. The diluted mixture enables selective etching of up to 9.6 mm long, 1 μm wide and 18 μm high microchannels in 23 days. The etching parameter D of 11.2 μm2/s is a factor of 3 higher than previously reported and the selectivity is even increased by an order of magnitude. c 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.-
dc.description.sponsorshipExperimentalphysik und Materialwissenschaften-
dc.language.isoeng-
dc.publisherOSA-
dc.relation.ispartofOptical materials express-
dc.titleInfluence of diluted acid mixtures on selective etching of MHz- A nd kHz-fs-laser inscribed structures in YAG-
dc.typeArticle-
dc.identifier.doi10.1364/OME.423931-
dc.identifier.scopus2-s2.0-85105525604-
dcterms.bibliographicCitation.volume11-
dcterms.bibliographicCitation.issue5-
dcterms.bibliographicCitation.pagestart1546-
dcterms.bibliographicCitation.pageend1554-
dcterms.bibliographicCitation.originalpublisherplaceWashington, DC-
local.submission.typeonly-metadata-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltext_sNo Fulltext-
item.openairetypeArticle-
item.fulltextNo Fulltext-
crisitem.author.deptExperimentalphysik und Materialwissenschaften-
crisitem.author.deptExperimentalphysik und Materialwissenschaften-
crisitem.author.orcid0000-0001-7923-0113-
crisitem.author.parentorgFakultät für Elektrotechnik-
crisitem.author.parentorgFakultät für Elektrotechnik-
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