Electromagnetic interference caused by rapid switching of a DC-DC-converter with GaN-HFETs

DOI
URI
Scopus ID
Conference
International Symposium on Electromagnetic Compatibility (EMC Europe 2025) ; Paris, France ; September 1–5, 2025
Project
Publisher
IEEE
Book title
EMC EUROPE 2025
ISBN
First page
528
Last page
533
Peer-reviewed
✅
Part of the university bibliography
✅
Language
English
Keyword
conducted emission (CE)
electromagnetic interference (EMI)
fall times
radiated emission (RE)
rise times
switching frequency
dtec.bw
Abstract
From the analysis of the measured switching signals as well as the switching edges of the gallium nitride heterojunction field-effect transistor (GaN-HFETs) in a DC-DC converter and their verification with modelled periodic switching signals, a correlation with the frequency spectrum of conducted and radiated electromagnetic emissions was investigated, which is relevant for automotive applications.
Version
Published version
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