Publication:
Comparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors

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cris.virtual.departmentLeistungselektronik
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cris.virtual.departmentbrowseLeistungselektronik
cris.virtual.departmentbrowseLeistungselektronik
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dc.contributor.authorMüter, Ulf
dc.contributor.authorSammler, Christian
dc.contributor.authorFahlbusch, Sebastian
dc.contributor.authorKlötzer, Sebastian
dc.contributor.authorHoffmann, Klaus Friedrich
dc.date.issued2016
dc.description.versionNA
dc.identifier.citationEnthalten in: European Conference on Power Electronics and Applications (18.:2016). 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe). - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource. - 2016, insges. 9 S.
dc.identifier.isbn978-1-5090-1410-1
dc.identifier.urihttps://openhsu.ub.hsu-hh.de/handle/10.24405/9739
dc.language.isoen
dc.publisherIEEE
dc.relation.conference18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) 2016
dc.relation.orgunitLeistungselektronik
dc.rights.accessRightsmetadata only access
dc.titleComparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors
dc.typeConference paper
dcterms.bibliographicCitation.originalpublisherplacePiscataway, NJ
dspace.entity.typePublication
hsu.identifier.ppn869443364
hsu.uniBibliography
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