Publication:
Comparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors

cris.customurl 9739
cris.virtual.department #PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department #PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department Leistungselektronik
cris.virtual.department #PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department #PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.departmentbrowse Leistungselektronik
cris.virtual.departmentbrowse Leistungselektronik
cris.virtual.departmentbrowse Leistungselektronik
cris.virtualsource.department #PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.department #PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.department #PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.department 924670c1-f42b-4008-b1c6-9d7c29bfc00b
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dc.contributor.author Müter, Ulf
dc.contributor.author Sammler, Christian
dc.contributor.author Fahlbusch, Sebastian
dc.contributor.author Klötzer, Sebastian
dc.contributor.author Hoffmann, Klaus Friedrich
dc.date.issued 2016
dc.description.version NA
dc.identifier.citation Enthalten in: European Conference on Power Electronics and Applications (18.:2016). 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe). - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource. - 2016, insges. 9 S.
dc.identifier.isbn 978-1-5090-1410-1
dc.identifier.uri https://openhsu.ub.hsu-hh.de/handle/10.24405/9739
dc.language.iso en
dc.publisher IEEE
dc.relation.conference 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) 2016
dc.relation.orgunit Leistungselektronik
dc.rights.accessRights metadata only access
dc.title Comparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors
dc.type Conference paper
dcterms.bibliographicCitation.originalpublisherplace Piscataway, NJ
dspace.entity.type Publication
hsu.uniBibliography
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