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  5. Comparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors

Comparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors

Publication date
2016
Document type
Conference paper
Author
Müter, Ulf
Sammler, Christian
Fahlbusch, Sebastian
Klötzer, Sebastian
Hoffmann, Klaus Friedrich  
Organisational unit
Leistungselektronik  
URI
https://openhsu.ub.hsu-hh.de/handle/10.24405/9739
Conference
18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) 2016
Publisher
IEEE
ISBN
978-1-5090-1410-1
Part of the university bibliography
✅
Additional Information
Language
English
Cite as
Enthalten in: European Conference on Power Electronics and Applications (18.:2016). 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe). - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource. - 2016, insges. 9 S.
Version
Not applicable (or unknown)
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