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  5. Dual On-State Gate Driver Concept for Improved Drive of Silicon Carbide MOSFETs
 
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Dual On-State Gate Driver Concept for Improved Drive of Silicon Carbide MOSFETs

Publication date
2017
Document type
Conference paper
Author
Fahlbusch, Sebastian
Fisahn, Fabian
Meissner, Michael 
Mueter, Ulf
Kloetzer, Sebastian
Hoffmann, Klaus F. 
Organisational unit
Leistungselektronik 
URL
https://ieeexplore.ieee.org/document/7990788
URI
https://openhsu.ub.hsu-hh.de/handle/10.24405/6269
Conference
PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Publisher
VDE Verlag
Part of the university bibliography
✅
  • Additional Information
Language
English
Cite as
Enthalten in: PCIM Europe 2017 / PCIM Europe Veranstaltung 2017 Nürnberg. - Berlin : VDE Verlag GmbH, 2017. - 2017, insges. 8 S.
Version
Not applicable (or unknown)
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