Characterisation of 1200 V SiC-MOSFETs-influence of repetitive short-circuit events on device parameters
Publication date
2024-06-19
Document type
Konferenzbeitrag
Author
Organisational unit
Conference
13th International Conference on Integrated Power Electronics Systems, CIPS 2024 ; Düsseldorf, Germany ; March 12-14, 2024
Publisher
VDE Verlag
Series or journal
ETG-Fachbericht
Periodical volume
173
Book title
CIPS 2024 : 13th International Conference on Integrated Power Electronics Systems
First page
540
Last page
546
Peer-reviewed
✅
Part of the university bibliography
✅
Language
English
Abstract
In this study, the impact of short-circuit (SC) events on 1200 V power SiC-MOSFETs is investigated. Therefore, trench and planar devices in the TO263-7 SMD-package were stressed with different pulse times of SC-type I. In order to understand the resulting failure mechanisms and to detect potential degradation of the MOSFETs, a static characterisation of device parameters were carried out before and in between the SC-events. Particular the gate threshold voltage Vth shows instabilities for SiC-devices under different stress conditions [1], [2]. The short-circuit behaviour as well as the static characterisation are discussed with regard to critical failures and the observation of degradations effects.
Version
Published version
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Metadata only access