Comparison of Unipolar Silicon Carbide Power Transistors Used in High Switching Frequency Inverter Topologies

Fahlbusch, Sebastian; Sahli, Nizar; Klötzer, Sebastian; Schäning, Björn; Hoffmann, Klaus Friedrich

Comparison of Unipolar Silicon Carbide Power Transistors Used in High Switching Frequency Inverter Topologies

Publication date

2016

Document type

Conference paper

Author

Fahlbusch, Sebastian

Sahli, Nizar

Klötzer, Sebastian

Schäning, Björn

Hoffmann, Klaus Friedrich

Organisational unit

Leistungselektronik

URL

http://ieeexplore.ieee.org/servlet/opac?punumber=7499335

URI

https://openhsu.ub.hsu-hh.de/handle/10.24405/9741

Conference

PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Publisher

IEEE

ISBN

978-1-5108-2530-7

Part of the university bibliography

✅

Language

English

Cite as

Enthalten in: PCIM Europe 2016: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource. - 2016, insges. 8 S.

Version

Not applicable (or unknown)

Access right on openHSU

Metadata only access