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  5. Comparison of Unipolar Silicon Carbide Power Transistors Used in High Switching Frequency Inverter Topologies
 
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Comparison of Unipolar Silicon Carbide Power Transistors Used in High Switching Frequency Inverter Topologies

Publication date
2016
Document type
Conference paper
Author
Fahlbusch, Sebastian
Sahli, Nizar
Klötzer, Sebastian
Schäning, Björn
Hoffmann, Klaus Friedrich 
Organisational unit
Leistungselektronik 
URL
http://ieeexplore.ieee.org/servlet/opac?punumber=7499335
URI
https://openhsu.ub.hsu-hh.de/handle/10.24405/9741
ISBN
978-1-5108-2530-7
Conference
PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Part of the university bibliography
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  • Additional Information
Cite as
Enthalten in: PCIM Europe 2016: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. - [Piscataway, NJ] : IEEE, 2016. - 1 Online-Ressource. - 2016, insges. 8 S.
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