Analysing the influence of a high number of short circuit events on the device parameters of 1200V SiC-MOSFETs
Publication date
2024-11-20
Document type
Konferenzbeitrag
Author
Organisational unit
Scopus ID
Conference
2024 Energy Conversion Congress & Expo Europe (ECCE Europe) ; Darmstadt, Germany ; September 2-6, 2024
Publisher
IEEE
Book title
ECCE - Energy Conversion Congress & Expo Europe 2024 : 2-6 September, Darmstadt : proceedings
Peer-reviewed
✅
Part of the university bibliography
✅
Language
English
Keyword
component
degradation
Robustness
Short-circuit (SC) type I
Silicon carbide (SiC) MOSFETs
Abstract
This paper investigates the effect of repeated type I short-circuit (SC) events on device parameters of modern 1200V silicon carbide (SiC) MOSFETs. Therefore, tests have been performed with a constant short-circuit time, DC-link voltage as well as a controlled case temperature of 60° C. Different SiC MOSFETs in TO263-7 package with similar on-state resistance of different manufacturers with both trench and planar structure have been analysed. In order to determine possible degradation, the threshold and the breakdown voltage are particular interesting parameters as well as the behaviour of the components in the first and third quadrant operation.
Version
Published version
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