Dynamic characterisation of 1200V-SiC-MOSFETs for high current applications in TO247-4-packages

Publication date
2023
Document type
Konferenzbeitrag
Author
Fehrenbach, Dietmar
Wagner, Bernhard
Organisational unit
DOI
URI
Conference
PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ; Nuremberg, Germany ; May 9–11, 2023
Publisher
VDE Verlag
Series or journal
PCIM Europe conference proceedings
Book title
PCIM Europe 2023
ISBN
Peer-reviewed
✅
Part of the university bibliography
✅
Language
English
Abstract
According to the recent trend, SiC-MOSFETs have been increasingly conquering the sector of high power semiconductors [1]. This also includes the field of discrete devices for high frequency high current applications which has been dominated by Si-IGBTs in the past and the present. Compared to these Si-IGBTs the wide band gap (WBG) devices can perform very fast switching with very high slew rates. In the proposed survey, state of the art discrete SiC-MOSFETs will be analysed in a high quality measurement setup in order to rate and compare the dynamic characteristics.
Version
Published version
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