Fabrication and Characterization of Organic Field-Effect Transistors with Modified Gate Dielectrics and Application for Organic Nonvolatile Memory Cells

Publication:
Fabrication and Characterization of Organic Field-Effect Transistors with Modified Gate Dielectrics and Application for Organic Nonvolatile Memory Cells

cris.customurl	9244
dc.contributor.advisor	Göbel, Holger
dc.contributor.author	Gong, Lin
dc.contributor.grantor	Helmut-Schmidt-Universität / Universität der Bundeswehr Hamburg
dc.contributor.referee	Kip, Detlef
dc.date.issued	2020-07
dc.description.version	NA
dc.identifier.doi	10.24405/9244
dc.identifier.uri	https://openhsu.ub.hsu-hh.de/handle/10.24405/9244
dc.language.iso	en
dc.publisher	Universitätsbibliothek der HSU/UniBw H
dc.relation.orgunit	Elektronik
dc.rights.accessRights	open access
dc.subject	Organic Thin-Film Transistor
dc.subject	Organic Nonvolatile Memory
dc.subject.ddc	620 Ingenieurwissenschaften	de_DE
dc.title	Fabrication and Characterization of Organic Field-Effect Transistors with Modified Gate Dielectrics and Application for Organic Nonvolatile Memory Cells
dc.type	PhD thesis (dissertation)
dcterms.bibliographicCitation.originalpublisherplace	Hamburg
dcterms.dateAccepted	2020-06-30
dspace.entity.type	Publication
hsu.thesis.grantorplace	Hamburg
hsu.uniBibliography	✅

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