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  5. Conducted EMI from GaN-based 48 V to 12 V DC-DC converters for automotive applications

Conducted EMI from GaN-based 48 V to 12 V DC-DC converters for automotive applications

Publication date
2024-08-29
Document type
Konferenzbeitrag
Author
Wendt, Marita  
Kampert, Erik  
Wendt, Jost
Hoffmann, Klaus  
Dickmann, Stefan  
Organisational unit
Leistungselektronik  
DOI
10.30420/566262330
URI
https://openhsu.ub.hsu-hh.de/handle/10.24405/21043
Scopus ID
2-s2.0-85202029160
Conference
PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ; Nuremberg, Germany ; June 11-13, 2024
Publisher
VDE Verlag
Book title
PCIM Europe 2024: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
ISBN
978-3-8007-6262-0
Peer-reviewed
✅
Part of the university bibliography
✅
Additional Information
Language
English
Abstract
Gallium Nitride (GaN)-based converters have emerged as a promising technology to increase the efficiency and power density of power electronic systems in electric vehicles (EVs). However, the integration of GaN semiconductor devices introduces challenges regarding electromagnetic interference (EMI). This work focusses on EMI measurements and on exploring the relationship between defined parameters such as output current or switching frequency and conducted emissions (CE) in converters with GaN switches. Moreover, the relationship between the switching transients of the GaN-FETs and the interference frequency range is examined and the challenges of using GaN-based converters in EVs related to EMI are discussed.
Version
Published version
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