Publication:
Electric-field enhancement of beam coupling in Sn₂P₂S₆

cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.departmentExperimentalphysik und Materialwissenschaften
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cris.virtual.departmentbrowseExperimentalphysik und Materialwissenschaften
cris.virtual.departmentbrowseExperimentalphysik und Materialwissenschaften
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cris.virtualsource.departmente25ab10e-f014-405b-ae9d-5dfa5939c704
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dc.contributor.authorShumelyuk, A.
dc.contributor.authorOdoulov, S.
dc.contributor.authorKip, Detlef
dc.contributor.authorKrätzig, E.
dc.date.issued2001
dc.description.abstractThe influence of an external field on photorefractive recording in Sn2P2S6 (SPS) crystals is studied. A large gain factor of more then 15 cm-1 is achieved for a grating spacing of 12 μm at λ = 0.9 μm. For an applied field exceeding 0±200 V/cm a switching of the beam coupling direction is detected, exhibiting a pronounced hysteresis.
dc.description.versionNA
dc.identifier.doi10.1007/s003400100556
dc.identifier.issn0946-2171
dc.identifier.scopus2-s2.0-0034802003
dc.identifier.urihttps://openhsu.ub.hsu-hh.de/handle/10.24405/14074
dc.language.isoen
dc.publisherSpringer
dc.relation.journalApplied Physics B Lasers and optics
dc.relation.orgunitUniversität Osnabrück
dc.rights.accessRightsmetadata only access
dc.titleElectric-field enhancement of beam coupling in Sn₂P₂S₆
dc.typeResearch article
dcterms.bibliographicCitation.originalpublisherplaceBerlin
dspace.entity.typePublication
hsu.uniBibliographyNein
oaire.citation.endPage710
oaire.citation.startPage707
oaire.citation.volume72
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