Influence of diluted acid mixtures on selective etching of MHz- A nd kHz-fs-laser inscribed structures in YAG
Publication date
2021
Document type
Research article
Author
Organisational unit
Scopus ID
Publisher
OSA
Series or journal
Optical materials express
ISSN
Periodical volume
11
Periodical issue
5
First page
1546
Last page
1554
Part of the university bibliography
✅
Language
English
Abstract
We show that the inscription velocity of fs-laser written structures in YAG crystals can be significantly improved by the use of MHz repetition rates for the writing process. Using a 10 MHz inscription laser, record high writing velocities up to 100 mm/s are achieved. Also, the selective etching process is accelerated using a diluted mixture of 22% H3PO4and 24% H2SO4. The diluted mixture enables selective etching of up to 9.6 mm long, 1 μm wide and 18 μm high microchannels in 23 days. The etching parameter D of 11.2 μm2/s is a factor of 3 higher than previously reported and the selectivity is even increased by an order of magnitude. c 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
Version
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