Influence of diluted acid mixtures on selective etching of MHz- A nd kHz-fs-laser inscribed structures in YAG
Publication date
2021
Document type
Research article
Author
Organisational unit
Scopus ID
Publisher
OSA
Series or journal
Optical materials express
Periodical volume
11
Periodical issue
5
First page
1546
Last page
1554
Part of the university bibliography
✅
Language
English
Abstract
We show that the inscription velocity of fs-laser written structures in YAG crystals can be significantly improved by the use of MHz repetition rates for the writing process. Using a 10 MHz inscription laser, record high writing velocities up to 100 mm/s are achieved. Also, the selective etching process is accelerated using a diluted mixture of 22% H3PO4and 24% H2SO4. The diluted mixture enables selective etching of up to 9.6 mm long, 1 μm wide and 18 μm high microchannels in 23 days. The etching parameter D of 11.2 μm2/s is a factor of 3 higher than previously reported and the selectivity is even increased by an order of magnitude. c 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
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