Evaluation of novel high-bandwidth current sensors for high-current SiC-applications

PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ; Nuremberg, Germany ; May 6-8, 2025

Publisher

VDE Verlag

Book title

PCIM 2025: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

ISBN

978-3-8007-6541-6

First page

2595

Last page

2603

Peer-reviewed

✅

Part of the university bibliography

✅

Language

English

Abstract

High bandwidth current sensors are needed to capture the fast switching transients of modern wide-bandgap semiconductor switches made from GaN and SiC. This work evaluates the usage of novel current sensors such as the M-Shunt and the second-generation Infinity Sensor for their ability to accurately resolve switching transients in the range of nanoseconds in high-current applications. Important metrics include: high bandwidth, low insertion inductance, small size and DC-capability. Measurement results are compared to established current sensors (Rogowski coil and coaxial shunt). Double pulse tests in an NPC inverter application were performed to test the sensors up to currents of 400 A.

Version

Published version

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