Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension
Publication date
2024-09-08
Document type
Konferenzbeitrag
Author
Organisational unit
Conference
International Conference on Silicon Carbide and Related Materials 2024 (ICSCRM) ; Raleigh, NC, USA ; September 29 — October 4, 2024
Publisher
Trans Tech Publications
Series or journal
Key Engineering Materials (KEM)
ISSN
Periodical volume
1022
Book title
Book of Abstracts from the International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
First page
1
Last page
8
Peer-reviewed
✅
Part of the university bibliography
✅
Language
English
Abstract
4H-SiC thyristors are of particular interest in pulsed power applications due to their ability to block high voltages and transfer high current densities along with fast switching times. Here, we present a paper that demonstrates both (i) the impact of the design parameters on the blocking characteristics based on simulations taking into account the anisotropy of 4H-SiC and (ii) a critical comparison to real devices having equivalent epitaxial structural design. Simulations and measurements show that an etched junction termination extension (JTE) is suitable to design high-voltage SiC thyristors. Concerning breakdown voltage, the real devices data agree to simulations for junction termination extension thickness in the relevant region. Besides the actual JTE thickness and doping concentration, the presence of a relatively thin field-stop layer might explain the discrepancy between experiment and simulation.
Version
Published version
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