Investigation of the degradation of 1200V SiC-MOSFETs stressed by different gamma radiation dose

Publication date
2025-06-30
Document type
Konferenzbeitrag
Author
Busch, Lucas
Wehrsted, Martin
Müller, Alexander
Organisational unit
DOI
URI
Scopus ID
Conference
PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ; Nuremberg, Germany ; May 6-8, 2025
Publisher
VDE Verlag
Book title
PCIM 2025: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
ISBN
First page
1527
Last page
1535
Peer-reviewed
✅
Part of the university bibliography
✅
Language
English
Abstract
This paper presents the degradation of 1200 V Siliconcarbide (SiC) MOSFETs in regard to the influence of different gamma radiation doses (γ-radiation). The impacts of four distinct γ-radiation doses (300 Gy, 200 Gy, 100 Gy and 50 Gy) were examined. The analysis was conducted using four different MOSFETs from several manufacturers, all of them in the TO263-7 package. They belong to the same voltage class with similar on-state resistance but varying technologies. The primary indicators for degradation analysed in this study are the threshold VGS(th) and the breakdown voltage VDSS(BR).
Version
Published version
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