Haag, Felix

High bandwidth current sensors are needed to capture the fast switching transients of modern wide-bandgap semiconductor switches made from GaN and SiC. This work evaluates the usage of novel current sensors such as the M-Shunt and the second-generation Infinity Sensor for their ability to accurately resolve switching transients in the range of nanoseconds in high-current applications. Important metrics include: high bandwidth, low insertion inductance, small size and DC-capability. Measurement results are compared to established current sensors (Rogowski coil and coaxial shunt). Double pulse tests in an NPC inverter application were performed to test the sensors up to currents of 400 A.

The Chair of Power Electronics at the Helmut Schmidt University (HSU) and the French-German Research Institute (ISL) supervise three PhD theses in the framework of a cooperation agreement. Their research and development focusses on capacitor charging-systems with high-efficiency and high-power density as well as a new generation of silicon-carbide (SiC) power semiconductors for high-power pulse generators.