Browsing by Author Meissner, Michael

Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2018A SiC-based 15-Level Power Inverter for the Generation of Variable High Frequency Output VoltagesFahlbusch, Sebastian ; Meissner, Michael ; Klötzer, Sebastian ; Bröcker, Felix ; Hoffmann, Klaus Friedrich 
2018Analysis of 1200 V Si-SiC-Hybrid Switches for Resonant ApplicationsMeissner, Michael ; Fahlbusch, Sebastian ; Lüthke, Daniel ; Hoffmann, Klaus Friedrich 
2019Analysis of a 1200 V SiC-Si-Hybrid Switch for Resonant Applications with Consideration of Bipolar DesaturationMeissner, Michael ; Sauermann, Lars; Hoffmann, Klaus Friedrich 
2017Automated Test Bench for the Measurement of Si-IGBT and SiC-MOSFET Hybrid SwitchesMeissner, Michael ; Fahlbusch, Sebastian ; Hoffmann, Klaus F. 
2019Digitally Adjustable Gate Resistor Concept for Automated and Time-Saving Switching Characterisation of Power SemiconductorsMeissner, Michael ; Fahlbusch, Sebastian ; Lipke, Tobias; Hoffmann, Klaus F. 
2017Dual On-State Gate Driver Concept for Improved Drive of Silicon Carbide MOSFETsFahlbusch, Sebastian ; Fisahn, Fabian; Meissner, Michael ; Mueter, Ulf; Kloetzer, Sebastian ; Hoffmann, Klaus F. 
Open Access2021SiC-Si-Hybridschalter in resonant-schaltenden Topologien mit 1,2 kV- und 3,3 kV-BauelementenMeissner, Michael